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Observation of defect interface states at the Cu2O/CuxS junction using thermally stimulated I-V measurements

Authors:

SRD Kalingamudali ,

Department of Physics, University of Kelaniya, Kelaniya, Sri Lanka, LK
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W Siripala

Department of Physics, University of Kelaniya, Kelaniya, Sri Lanka, LK
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Abstract

A simple method was developed to fabricate a Cu2O/CuxS p-n junction diode and I-V characteristics of the diode was measured at various temperatures. It was revealed that there are current transport mechanisms at the junction which are leading to high leakage currents. Namely, an oscillatory behaviour of the current with the temperature was observed under reverse bias conditions. This behaviour was interpreted as the thermally enhanced tunnelling at the junction due to the existence of defect interface states. We believe that proper surface treatment might reduce the density of interface states, and thereby improve the I-V characteristics of the diode.

doi:10.4038/sljp.v2i0.175

Sri Lankan Journal of Physics, Vol.2 (2001) 7-12

How to Cite: Kalingamudali, S. & Siripala, W., (2001). Observation of defect interface states at the Cu2O/CuxS junction using thermally stimulated I-V measurements. Sri Lankan Journal of Physics. 2, pp.7–12. DOI: http://doi.org/10.4038/sljp.v2i0.175
Published on 17 Dec 2001.
Peer Reviewed

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